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BT15N60A0F Insulated gate bipolar transistor

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Description

BT15N60 A0F ○R BT15N60 A0F FS IGBT , ,。 RoHS 。 * FS ,; * :VCE(sat),TYP=2.0V @IC=15A,VGE=15V ; VCES IC Ptot (TC=25℃) VCE(sat) :TO-263.

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Datasheet Specifications

Part number
BT15N60A0F
Manufacturer
Huajing Microelectronics
File Size
1.30 MB
Datasheet
BT15N60A0F-HuajingMicroelectronics.pdf
Description
Insulated gate bipolar transistor

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