BT15N60A8F
Huajing Microelectronics
1.28MB
Insulated gate bipolar transistor.
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BT15N60A0F - Insulated gate bipolar transistor
(Huajing Microelectronics)
BT15N60 A0F
○R
BT15N60 A0F FS IGBT ， ，。 RoHS 。
● FS ，； ● ：VCE(sat),TYP=2.0V @IC=15A,VGE=15V ；
VCES IC Ptot （TC=25℃）
VCE(sat)
：TO-263
600 15.
BT15N60A9F - Silicon FS Planar IGBT
(Huajing Microelectronics)
Silicon FS Planar IGBT
BT15N60A9F
○R
General Description：
Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offe.
BT15N120ANF - Silicon FS Planar IGBT
(Huajing Microelectronics)
Silicon FS Planar IGBT
BT15N120ANF
○R
General Description：
Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 120.
BT150 - Thyristors logic level
(NXP)
Philips Semiconductors
Product specification
Thyristors logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate thyristors in a plastic env.
BT150 - SCRs
(UTC)
BT150
SCRS
UNISONIC TECHNOLOGIES CO., LTD
DESCRIPTION
Passivated thyristors in a plastic envelope, intended for use in applications requiring high.
BT150 - SCRs
(HAOPIN)
TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
BT150
SCRs
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use i.
BT150-500R - Thyristors logic level
(NXP)
Philips Semiconductors
Product specification
Thyristors logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate thyristors in a plastic env.
BT150-500R - SCRs
(HAOPIN)
TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
BT150
SCRs
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use i.
BT150-600R - Thyristors logic level
(NXP)
Philips Semiconductors
Product specification
Thyristors logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate thyristors in a plastic env.
BT150-600R - SCRs
(HAOPIN)
TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
BT150
SCRs
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use i.
