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CS19N40A8H

Silicon N-Channel Power MOSFET

CS19N40A8H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.24Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 37pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Para

CS19N40A8H General Description

CS19N40 A8H the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 400 19 180 0.18 performance and enhance the avalanche energy. The transistor can be used in various power swi.

CS19N40A8H Datasheet (425.80 KB)

Preview of CS19N40A8H PDF

Datasheet Details

Part number:

CS19N40A8H

Manufacturer:

Huajing Microelectronics

File Size:

425.80 KB

Description:

Silicon n-channel power mosfet.

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CS19N40A8H Silicon N-Channel Power MOSFET Huajing Microelectronics

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