CS19N40A8H Datasheet | Huajing Microelectronics

Silicon N-Channel Power MOSFET CS19N40 A8H ○R General Description： CS19N40 A8H the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 400 19 180 0.18 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.. Features ： l Fast Switching l Low ON Resistance(Rdson≤0.24Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 37pF) l 100% Single Pulse avalanche energy...