CS5N20A3 Datasheet - Huajing Microelectronics

CS5N20A3 Silicon N-Channel Power MOSFET

CS5N20 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and.

CS5N20A3 Features

* l Fast Switching l Low ON Resistance(Rdson≤0.65Ω) l Low Gate Charge (Typical Data:7nC) l Low Reverse transfer capacitances(Typical:8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of Video doorphone. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS5N20A3-HuajingDiscreteDevices.pdf