CS5N20A4 Datasheet | Huajing Microelectronics

Description ： VDSS CS5N20 A4, the silicon N-channel Enhanced ID VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) W which reduce the conduction loss, improve switching RDS(ON)Typ Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the Ro HS standard.. Features ： - Fast Switching - Low ON Resistance(Rdson≤0.65Ω) - Low Gate Charge (Typical Data:7n C) - Low Reverse transfer capacitances(Typical:8p F) - 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 TJ，Tstg Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25 °C Derating Factor above 25°C Operating Junction and Storage Temperature Range Rating 200 4.8 3.4 19.2 ±30 125 5 40 0.32 150，- 55 to 150 Units V A A A V m J V/ns W W/℃ ℃ WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2019V01 CS5N20 A4 ○R Electrical Characteristics（TJ= 25℃ unless otherwise specified）： OFF Characteristics Symbol...