CS5N20A4 Description
： VDSS 200 V CS5N20 A4, the silicon N-channel Enhanced ID 4.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 40 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.49 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with...
CS5N20A4 Key Features
- Fast Switching
- Low ON Resistance(Rdson≤0.65Ω)
- Low Gate Charge (Typical Data:7nC)
- Low Reverse transfer capacitances(Typical:8pF)
- 100% Single Pulse avalanche energy Test