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CS5N20A4 Datasheet Silicon N-channel Power MOSFET

Manufacturer: Huajing Microelectronics

Overview: Silicon N-Channel Power MOSFET ○R CS5N20 A4 General.

General Description

: VDSS 200 V CS5N20 A4, the silicon N-channel Enhanced ID 4.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 40 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.49 Ω performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-252, which accords with the RoHS standard..

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤0.65Ω).
  • Low Gate Charge (Typical Data:7nC).
  • Low Reverse transfer capacitances(Typical:8pF).
  • 100% Single Pulse avalanche energy Test.

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