CS5N20FA9 Datasheet | Huajing Microelectronics

Description ： VDSS 200 V CS5N20F A9, the silicon N-channel Enhanced ID 4.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 20 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.49 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the Ro HS standard.. Features ： l Fast Switching l Low ON Resistance(Rdson≤0.65Ω) l Low Gate Charge (Typical Data:7n C) l Low Reverse transfer capacitances(Typical:8p F) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of Video doorphone. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC =...