CS5N20FA9 datasheet by Huajing Microelectronics.
| Part number | CS5N20FA9 |
|---|---|
| Datasheet | CS5N20FA9-HuajingDiscreteDevices.pdf |
| File Size | 612.45 KB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon N-Channel Power MOSFET |
|
|
： VDSS 200 V CS5N20F A9, the silicon N-channel Enhanced ID 4.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 20 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.49 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with...
View all Huajing Microelectronics datasheets
| Part Number | Description |
|---|---|
| CS5N20A3 | Silicon N-Channel Power MOSFET |
| CS5N20A4 | Silicon N-Channel Power MOSFET |
| CS5N65A3 | Silicon N-Channel Power MOSFET |
| CS5N65A4 | Silicon N-Channel Power MOSFET |
| CS5N65A7H | Silicon N-Channel Power MOSFET |
| CS5N65A8H | Silicon N-Channel Power MOSFET |
| CS5N65FA9H | Silicon N-Channel Power MOSFET |
| CS5N70A4 | Silicon N-Channel Power MOSFET |
| CS5N70FA9 | Silicon N-Channel Power MOSFET |
| CS5N90ARH-G | Silicon N-Channel Power MOSFET |
