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CS6N60FA9H

Silicon N-Channel Power MOSFET

CS6N60FA9H Features

* l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 19.5nC) l Low Reverse transfer capacitances(Typical: 7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol P

CS6N60FA9H General Description

CS6N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS6N60FA9H Datasheet (301.69 KB)

Preview of CS6N60FA9H PDF

Datasheet Details

Part number:

CS6N60FA9H

Manufacturer:

Huajing Microelectronics

File Size:

301.69 KB

Description:

Silicon n-channel power mosfet.

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CS6N60FA9H Silicon N-Channel Power MOSFET Huajing Microelectronics

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