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CS90N03B3 Datasheet - Huajing Microelectronics

CS90N03B3 Silicon N-Channel Power MOSFET

CS90N03 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 25 90 80 4.8 switching performance and enhance the avalanche energy. The transistor can be used in various power switch.

CS90N03B3 Features

* l Trench FET Power MOSFET l Low ON Resistance(Rdson≤6mΩ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:291pF) l 100% Single Pulse avalanche energy Test Applications： Automotive,DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）：

CS90N03B3-HuajingDiscreteDevices.pdf

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Datasheet Details

Part number:

CS90N03B3

Manufacturer:

Huajing Microelectronics

File Size:

725.62 KB

Description:

Silicon n-channel power mosfet.

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