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CS9N90ANHD

Silicon N-Channel Power MOSFET

CS9N90ANHD Features

* Fast Switching

* ESD Improved Capability

* Low Gate Charge (Typical Data: 65nC)

* Low Reverse transfer capacitances(Typical: 13pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of PC POWER. Absolute（Tc= 25℃ unless otherwise specified）： Sym

CS9N90ANHD General Description

CS9N90 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS9N90ANHD Datasheet (543.83 KB)

Preview of CS9N90ANHD PDF

Datasheet Details

Part number:

CS9N90ANHD

Manufacturer:

Huajing Microelectronics

File Size:

543.83 KB

Description:

Silicon n-channel power mosfet.

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TAGS

CS9N90ANHD Silicon N-Channel Power MOSFET Huajing Microelectronics

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