CS9N90FA9D Datasheet - Huajing Microelectronics

CS9N90FA9D Silicon N-Channel Power MOSFET

CS9N90F A9HD the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 900 9 60 0.9 performance and enhance the avalanche energy. The transistor can be used in various power switc.

CS9N90FA9D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 62nC) l Low Reverse transfer capacitances(Typical: 18pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of PC POWER. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VD

CS9N90FA9D-HuajingMicroelectronics.pdf