CS9N90FA9RD Datasheet - CR Micro

CS9N90FA9RD Silicon N-Channel Power MOSFET

CS9N90F A9RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization .

CS9N90FA9RD Features

* l Fast Switching l Low ON Resistance(Rdson≤1.1Ω) l Low Gate Charge (Typical Data: 57.9nC) l Low Reverse transfer capacitances(Typical: 11.3pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol

CS9N90FA9RD-CRMicro.pdf