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CS9N90AKRD-G

Silicon N-Channel Power MOSFET

CS9N90AKRD-G Features

* l Fast Switching l Low ON Resistance(Rdson≤1.1Ω) l Low Gate Charge (Typical Data: 57.9nC) l Low Reverse transfer capacitances(Typical: 11.3pF) l 100% Single Pulse avalanche energy Test l Halogen Free Applications： PC power and Inverter. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Paramete

CS9N90AKRD-G General Description

CS9N90 AKRD-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization.

CS9N90AKRD-G Datasheet (375.89 KB)

Preview of CS9N90AKRD-G PDF

Datasheet Details

Part number:

CS9N90AKRD-G

Manufacturer:

CR Micro

File Size:

375.89 KB

Description:

Silicon n-channel power mosfet.

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CS9N90AKRD-G Silicon N-Channel Power MOSFET CR Micro

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