CS9N90FA9RD-G Datasheet - CR Micro

CS9N90FA9RD-G Silicon N-Channel Power MOSFET

CS9N90F A9RD-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio.

CS9N90FA9RD-G Features

* l Fast Switching l Low ON Resistance(Rdson≤1.1Ω) l Low Gate Charge (Typical Data: 57.9nC) l Low Reverse transfer capacitances(Typical: 11.3pF) l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise speci

CS9N90FA9RD-G-CRMicro.pdf