CS9N20FA9R - Silicon N-Channel Power MOSFET
CS9N20F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization a
CS9N20FA9R Features
* Fast Switching
* Low ON Resistance(Rdson≤0.28Ω)
* Low Gate Charge (Typical Data: 12.6nC)
* Low Reverse transfer capacitances(Typical: 8.8pF)
* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless other
