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CS9N20A4R Silicon N-Channel Power MOSFET

CS9N20A4R Description

Silicon N-Channel Power MOSFET ○R CS9N20 A4R General .
CS9N20 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

CS9N20A4R Features

* Fast Switching
* Low ON Resistance(Rdson≤0.28Ω)
* Low Gate Charge (Typical Data: 12.6nC)
* Low Reverse transfer capacitances(Typical: 8.8pF)

CS9N20A4R Applications

* Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Sou

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Datasheet Details

Part number
CS9N20A4R
Manufacturer
CR Micro
File Size
595.45 KB
Datasheet
CS9N20A4R-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
CR Micro CS9N20A4R-like datasheet