HB857 Datasheet - Huashan

HB857 PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSISTOR HB857 APPLICATIONS LOW FREQUENCY POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Junction Temperature PC Collector Dissipation Tc=25 VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current DC 55~150 150 40W -70V -50V -5V -4A TO-220 1 Base B 2 Collector C 3 Emitter, E ELECTRICAL CHARACTERISTICS Ta=25 Symbol Characteristics Min Typ Max Unit Tes.

HB857-Huashan.pdf