HBU406 Datasheet - Huashan

HBU406 NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR HBU406 APPLICATIONS High Voltage Swltching . ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55~150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 60W VCBO Collector-Base Voltage 40 0 V VCEO Collector-Emitter Voltage 20 0 V VEBO Emitter- Base Voltage 6V IC Collector Current DC 7A ICP Collector Current Pulse 10A Ib Base Current 4A TO-220 1 Base B 2 Collector C 3 Emitter E ELECTRICAL CHAR.

HBU406 Datasheet (548.06 KB)