H57V2582GTR_HynixSemiconductor.pdf
Datasheet Details
Part number:
H57V2582GTR-60C, H57V2582GTR
Manufacturer:
Hynix Semiconductor
File Size:
267.34 KB
Description:
256mb synchronous dram based on 8m x 4bank x8 i/o.
Note:
This datasheet PDF includes multiple part numbers: H57V2582GTR-60C, H57V2582GTR.
Please refer to the document for exact specifications by model.
H57V2582GTR-60C, H57V2582GTR, 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.0 / Aug.
2009 1 Synchronous DRAM Memory 256Mbit H57V2582GTR Series www.DataSheet4U.com 111 Document Title 256Mbit (32M x8) Synchronous DRAM Revi
H57V2582GTR-60C Features
* Standard SDRAM Protocol Internal 4bank operation Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface Low Voltage interface to reduce I/O power 8,192 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst Type
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