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H57V2582GTR-60C - 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O

This page provides the datasheet information for the H57V2582GTR-60C, a member of the H57V2582GTR 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O family.

Datasheet Summary

Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Standard SDRAM Protocol Internal 4bank operation Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface Low Voltage interface to reduce I/O power 8,192 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst Type - 1, 2, 4, 8 or full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst.
  • 0oC ~ 70oC Operation Package Type : 54_Pin TSOPII This prod.

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Datasheet Details

Part number H57V2582GTR-60C
Manufacturer Hynix Semiconductor
File Size 267.34 KB
Description 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
Datasheet download datasheet H57V2582GTR-60C Datasheet
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www.DataSheet4U.com 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 256M (32Mx8bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 8,388,608 x 8 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Aug. 2009 1 Synchronous DRAM Memory 256Mbit H57V2582GTR Series www.DataSheet4U.com 111 Document Title 256Mbit (32M x8) Synchronous DRAM Revision History Revision No. 0.1 1.0 History Preliminary Release Draft Date Jun. 2009 Aug. 2009 Remark Rev 1.0 / Aug. 2009 2 Synchronous DRAM Memory 256Mbit H57V2582GTR Series www.DataSheet4U.
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