H57V2582GTR_HynixSemiconductor.pdf
Datasheet Details
Part number:
H57V2582GTR-60C, H57V2582GTR
Manufacturer:
Hynix Semiconductor
File Size:
267.34 KB
Description:
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
Note:
This datasheet PDF includes multiple part numbers: H57V2582GTR-60C, H57V2582GTR.
Please refer to the document for exact specifications by model.
Features
* Standard SDRAM Protocol Internal 4bank operation Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface Low Voltage interface to reduce I/O power 8,192 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst TypeApplications
* which requires large memory density and high bandwidth. It is organized as 4banks of 8,388,608 x 8 I/O. Synchronous DRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Synchronous DRAM latch each control signal at the rising edge of a basic input clock (CLK) and inpuH57V2582GTR-60C Distributors
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