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H57V2582GTR-60J, H57V2582GTR-60I Datasheet - Hynix Semiconductor

H57V2582GTR-60J 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Aug. 2009 1 111 Synchronous DRAM Memory 256Mbit H57V2582GTR-xxI Series Document Title 256Mbit (32M x8) Synchronous DRAM Revision History Revis.

H57V2582GTR-60J Features

* Standard SDRAM Protocol Internal 4bank operation Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface Low Voltage interface to reduce I/O power 8,192 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst Type

H57V2582GTR-60I-HynixSemiconductor.pdf

This datasheet PDF includes multiple part numbers: H57V2582GTR-60J, H57V2582GTR-60I. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

H57V2582GTR-60J, H57V2582GTR-60I

Manufacturer:

Hynix Semiconductor

File Size:

227.17 KB

Description:

256mb synchronous dram based on 8m x 4bank x8 i/o.

Note:

This datasheet PDF includes multiple part numbers: H57V2582GTR-60J, H57V2582GTR-60I.
Please refer to the document for exact specifications by model.

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H57V2582GTR-60J H57V2582GTR-60I 256Mb Synchronous DRAM based 4Bank Hynix Semiconductor

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