H57V2582GTR-60J Datasheet, I/o, Hynix Semiconductor

H57V2582GTR-60J Features

• I/o
• Standard SDRAM Protocol Internal 4bank operation Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface Low Voltage interface to r

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H57V2582GTR-60J

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Hynix Semiconductor

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📄 Datasheet

Description:

256mb synchronous dram based on 8m x 4bank x8 i/o. and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses a

H57V2582GTR-60J Application

• Applications which requires large memory density and high bandwidth. It is organized as 4banks of 8,388,608 x 8 I/O. Synchronous DRAM is a type of D

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H57V2582GTR-60J

Hynix Semiconductor

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