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H57V2622GMR-60X - 256Mb Dual Die Synchronous DRAM

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Hynix Semiconductor

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H57V2622GMR-60X 256Mb Dual Die Synchronous DRAM by Hynix Semiconductor - Datasheet Preview — Datasheet preview – H57V2622GMR-60X

Datasheet Details

Part number	H57V2622GMR-60X
Manufacturer	Hynix Semiconductor
File Size	394.20 KB
Description	256Mb Dual Die Synchronous DRAM
Datasheet	H57V2622GMR-60X Datasheet
Note	This datasheet PDF includes multiple part numbers: H57V2622GMR-60X, H57V2622GMR. Please refer to the document for exact specifications by model.
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Product details

Description

and is subject to change without notice.

Features

Standard SDRAM Protocol Uses 2pcs of 128Mb Monolithic Die Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface 4096 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst Type Operating Temp. - Commercial Temp. : 0oC ~ 70oC, Industrial Temp. : -40oC ~ 85oC.
This product is in compliance with the directive pertaining of RoHS.

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Published: Oct 11, 2014 |