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H57V2622GMR-75X, H57V2622GMR Datasheet - Hynix Semiconductor

H57V2622GMR-75X 256Mb Dual Die Synchronous DRAM

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Oct. 2009 1 www.DataSheet4U.com 111 Synchronous DRAM Memory 256Mbit H57V2622GMR Series Document Title 256Mbit (8M x32) Synchronous DRAM Rev.

H57V2622GMR-75X Features

* Standard SDRAM Protocol Uses 2pcs of 128Mb Monolithic Die Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface 4096 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst Type Operating Temp. - Commercial Temp

H57V2622GMR_HynixSemiconductor.pdf

This datasheet PDF includes multiple part numbers: H57V2622GMR-75X, H57V2622GMR. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

H57V2622GMR-75X, H57V2622GMR

Manufacturer:

Hynix Semiconductor

File Size:

394.20 KB

Description:

256mb dual die synchronous dram.

Note:

This datasheet PDF includes multiple part numbers: H57V2622GMR-75X, H57V2622GMR.
Please refer to the document for exact specifications by model.

H57V2622GMR-75X Distributor

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H57V2622GMR-75X H57V2622GMR 256Mb Dual Die Synchronous DRAM Hynix Semiconductor