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H57V2622GMR-60X

256Mb Dual Die Synchronous DRAM

H57V2622GMR-60X Features

* Standard SDRAM Protocol Uses 2pcs of 128Mb Monolithic Die Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface 4096 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst Type Operating Temp. - Commercial Temp

H57V2622GMR-60X General Description

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Oct. 2009 1 www.DataSheet4U.com 111 Synchronous DRAM Memory 256Mbit H57V2622GMR Series Document Title 256Mbit (8M x32) Synchronous DRAM Rev.

H57V2622GMR-60X Datasheet (394.20 KB)

Preview of H57V2622GMR-60X PDF

Datasheet Details

Part number:

H57V2622GMR-60X

Manufacturer:

Hynix Semiconductor

File Size:

394.20 KB

Description:

256mb dual die synchronous dram.

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H57V2622GMR-60X 256Mb Dual Die Synchronous DRAM Hynix Semiconductor

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