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H57V2622GMR-60X, H57V2622GMR 256Mb Dual Die Synchronous DRAM

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Description

www.DataSheet4U.com 256Mb : x32 Dual Die Synchronous DRAM 256M (8Mx32bit) Hynix SDRAM Memory This document is a general product .
and is subject to change without notice.

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This datasheet PDF includes multiple part numbers: H57V2622GMR-60X, H57V2622GMR. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
H57V2622GMR-60X, H57V2622GMR
Manufacturer
Hynix Semiconductor
File Size
394.20 KB
Datasheet
H57V2622GMR_HynixSemiconductor.pdf
Description
256Mb Dual Die Synchronous DRAM
Note
This datasheet PDF includes multiple part numbers: H57V2622GMR-60X, H57V2622GMR.
Please refer to the document for exact specifications by model.

Features

* Standard SDRAM Protocol Uses 2pcs of 128Mb Monolithic Die Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface 4096 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst Type Operating Temp. - Commercial Temp

Applications

* which requires large memory density and high bandwidth uses Hinix’s 128Mb SDR monolithic die and has similar functionality. Synchronous DRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Synchronous DRAM latch each control signal at the rising edge of a basic input

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