H57V2562GFR Datasheet, I/o, Hynix Semiconductor

H57V2562GFR Features

• I/o
• Standard SDRAM Protocol Internal 4bank operation Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All devi

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H57V2562GFR

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Hynix Semiconductor

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📄 Datasheet

Description:

256mb synchronous dram based on 4m x 4bank x16 i/o. and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses a

H57V2562GFR Application

• Applications which requires large memory density and high bandwidth. It is organized as 4banks of 4,194,304 x 16 I/O. Synchronous DRAM is a type of

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H57V2562GFR

Hynix Semiconductor

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