H57V2582GTR Datasheet - Hynix Semiconductor

datasheet Preview Page 1 from Datasheet4u.com

H57V2582GTR 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O

www.DataSheet4U.com 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 256M (32Mx8bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of.
and is subject to change without notice.

H57V2582GTR_HynixSemiconductor.pdf

H57V2582GTR Datasheet Preview — Preview of H57V2582GTR PDF

Datasheet Details

Part number:

H57V2582GTR

Manufacturer:

Hynix Semiconductor

File Size:

267.34 KB

Description:

256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O

Features

* Standard SDRAM Protocol Internal 4bank operation Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface Low Voltage interface to reduce I/O power 8,192 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst Type

Applications

* which requires large memory density and high bandwidth. It is organized as 4banks of 8,388,608 x 8 I/O. Synchronous DRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Synchronous DRAM latch each control signal at the rising edge of a basic input clock (CLK) and inpu

H57V2582GTR Distributors

📁 Related Datasheet

H5773 H5773-01 H5773-02 H5773-03 H5773-04 H5773-06

📌 All Tags

H57V2582GTR 256Mb Synchronous DRAM based 4Bank Hynix Semiconductor

Hynix Semiconductor H57V2582GTR-like datasheet