Datasheet Specifications
- Part number
- H57V2622GMR
- Manufacturer
- Hynix Semiconductor
- File Size
- 394.20 KB
- Datasheet
- H57V2622GMR_HynixSemiconductor.pdf
- Description
- 256Mb Dual Die Synchronous DRAM
Description
www.DataSheet4U.com 256Mb : x32 Dual Die Synchronous DRAM 256M (8Mx32bit) Hynix SDRAM Memory This document is a general product .
Features
* Standard SDRAM Protocol Uses 2pcs of 128Mb Monolithic Die Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface 4096 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst Type Operating Temp. - Commercial TempApplications
* which requires large memory density and high bandwidth uses Hinix’s 128Mb SDR monolithic die and has similar functionality. Synchronous DRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Synchronous DRAM latch each control signal at the rising edge of a basic inputH57V2622GMR Distributors
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