H5DU1262GTR datasheet, sdram equivalent, Hynix Semiconductor

H5DU1262GTR Features and benefits

* VDD, VDDQ = 2.3V min ~ 2.7V max (Typical 2.5V Operation +/- 0.2V for DDR266, 333 ,400 and 500) All inputs and outputs are compatible with SSTL_2 interface Fully dif.

H5DU1262GTR Application

which requires large memory density and high bandwidth. This Hynix 128Mb DDR SDRAMs offer fully synchronous operations r.

H5DU1262GTR Description

and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / May 2009 1 www.DataSheet4U.com H5DU1262GTR Series Revision History Revision No.

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H5DU1262GTR Datasheet, sdram equivalent, Hynix Semiconductor

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H5DU1262GTR Features and benefits

H5DU1262GTR Application

H5DU1262GTR Description