Datasheet Details
- Part number
- H5DU5162ETR
- Manufacturer
- Hynix Semiconductor
- File Size
- 393.48 KB
- Datasheet
- H5DU5162ETR_HynixSemiconductor.pdf
- Description
- (H5DU5162ETR / H5DU5182ETR) 512Mb DDR SDRAM
H5DU5162ETR Description
www.DataSheet4U.com 512Mb DDR SDRAM H5DU5182ETR H5DU5162ETR This document is a general product .H5DU5162ETR Features
* VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional daH5DU5162ETR Applications
* which requires large memory density and high bandwidth. This Hynix 512Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data str
📁 Related Datasheet
📌 All Tags