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H5DU5162EFR (H5DU5162EFR / H5DU5182EFR) 512Mb DDR SDRAM

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Description

www.DataSheet4U.com 512Mb DDR SDRAM H5DU5182EFR H5DU5162EFR This document is a general product .
and is subject to change without notice.

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Datasheet Specifications

Part number
H5DU5162EFR
Manufacturer
Hynix Semiconductor
File Size
565.91 KB
Datasheet
H5DU5162EFR_HynixSemiconductor.pdf
Description
(H5DU5162EFR / H5DU5182EFR) 512Mb DDR SDRAM

Features

* VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional da

Applications

* which requires large memory density and high bandwidth. This Hynix 512Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data str

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