H5TQ4G83AFR-xxC, H5TQ4G43AFR-xxC Datasheet - Hynix Semiconductor

H5TQ4G83AFR-xxC, H5TQ4G43AFR-xxC, 4Gb DDR3 SDRAM

4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G43AFR-xxC H5TQ4G83AFR-xxC H5TQ4G63AFR-xxC * SK hynix reserves the r.
The H5TQ4G43AFR-xxC, H5TQ4G83AFR-xxC and H5TQ4G63AFR-xxC are a 4Gb CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memo.

H5TQ4G43AFR-xxC_HynixSemiconductor.pdf

H5TQ4G83AFR-xxC Datasheet Preview — This datasheet PDF includes multiple part numbers: H5TQ4G83AFR-xxC, H5TQ4G43AFR-xxC. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number:

H5TQ4G83AFR-xxC, H5TQ4G43AFR-xxC

Manufacturer:

Hynix Semiconductor

File Size:

780.09 KB

Description:

4Gb DDR3 SDRAM

Note:

This datasheet PDF includes multiple part numbers: H5TQ4G83AFR-xxC, H5TQ4G43AFR-xxC.
Please refer to the document for exact specifications by model.

Features

* and Ordering Information FEATURES
* VDD=VDDQ=1.5V +/- 0.075V
* Fully differential clock inputs (CK, CK) operation
* 8banks
* Average Refresh Cycle (Tcase of 0 oC~ 95 oC)
* Differential Data Strobe (DQS, DQS) - 7.8 µs at 0oC ~ 85 oC - 3.9 µs at 85oC ~ 95 oC

Applications

* which requires large memory density and high bandwidth. 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Writ

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H5TQ4G43AFR-xxC 4Gb DDR3 SDRAM Hynix Semiconductor

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