Datasheet Details
- Part number
- H5TQ4G83MFR-xxC
- Manufacturer
- Hynix
- File Size
- 274.84 KB
- Datasheet
- H5TQ4G83MFR-xxC_Hynix.pdf
- Description
- 4Gb DDR3 SDRAM
H5TQ4G83MFR-xxC Description
4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G83MFR-xxC H5TQ4G83MFR-xxI H5TQ4G83MFR-xxJ H5TQ4G63MFR-xxC H5TQ4G63MFR-xx.
The H5TQ4G83MFR-xxC,H5TQ4G63MFR-xxC, H5TQ4G83MFR-xxI, H5TQ4G63MFR-xxI, H5TQ4G83MFR-xxJ and H5TQ4G63MFR-xxJ are a 4,294,967,296-bit CMOS Double Data Ra.
H5TQ4G83MFR-xxC Features
* and Ordering Information
FEATURES
* VDD=VDDQ=1.5V +/- 0.075V
* Fully differential clock inputs (CK, CK) operation
* Differential Data Strobe (DQS, DQS)
* On chip DLL align DQ, DQS and DQS transition with CK transition
* DM masks write data-in at the both risin
H5TQ4G83MFR-xxC Applications
* which requires large memory density and high bandwidth. Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes an
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