H5TQ4G83EFR Datasheet - Hynix Semiconductor

H5TQ4G83EFR 4Gb DDR3 SDRAM

The H5TQ4G83EFR-xxC,H5TQ4G63EFR-xxC, H5TQ4G83EFR-xxI, H5TQ4G63EFR-xxI, H5TQ4G83EFR-xxL, H5TQ4G63EFR-xxL, H5TQ4G83EFR-xxJ, H5TQ4G63EFR-xxJ, H5TQ4G83EFR-xxK and H5TQ4G63EFR-xxK are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications wh.

4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G83EFR-xxC H5TQ4G83EFR-xxI H5TQ4G83EFR-xxL H5TQ4G83EFR-xxJ H5TQ4G83EFR-xxK H5TQ4G63EFR-xxC H5TQ4G63EFR-xxI H5TQ4G63EFR-xxL H5TQ4G63EFR-xxJ H5TQ4G63EFR-xxK SK Hynix reserves the right to change products or specifications without notice. Rev. 1.2/ Sep. 2016 1 Revision History Revision No. 0.1 1.0 1.1 1.2 History Initial Version x16 IDD spec. value update x8 IDD spec. value update Automotive Temp part update Dr.

H5TQ4G83EFR Features

* and Ordering Information FEATURES

* VDD=VDDQ=1.5V +/- 0.075V

* Fully differential clock inputs (CK, CK) operation

* Differential Data Strobe (DQS, DQS)

* On chip DLL align DQ, DQS and DQS transition with CK transition

* DM masks write data-in at the both ris

H5TQ4G83EFR-HynixSemiconductor.pdf