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H5TQ4G83EFR Datasheet - Hynix Semiconductor

4Gb DDR3 SDRAM

H5TQ4G83EFR Features

* and Ordering Information FEATURES

* VDD=VDDQ=1.5V +/- 0.075V

* Fully differential clock inputs (CK, CK) operation

* Differential Data Strobe (DQS, DQS)

* On chip DLL align DQ, DQS and DQS transition with CK transition

* DM masks write data-in at the both ris

H5TQ4G83EFR General Description

The H5TQ4G83EFR-xxC,H5TQ4G63EFR-xxC, H5TQ4G83EFR-xxI, H5TQ4G63EFR-xxI, H5TQ4G83EFR-xxL, H5TQ4G63EFR-xxL, H5TQ4G83EFR-xxJ, H5TQ4G63EFR-xxJ, H5TQ4G83EFR-xxK and H5TQ4G63EFR-xxK are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications wh.

H5TQ4G83EFR Datasheet (430.73 KB)

Preview of H5TQ4G83EFR PDF

Datasheet Details

Part number:

H5TQ4G83EFR

Manufacturer:

Hynix Semiconductor

File Size:

430.73 KB

Description:

4gb ddr3 sdram.
4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G83EFR-xxC H5TQ4G83EFR-xxI H5TQ4G83EFR-xxL H5TQ4G83EFR-xxJ H5TQ4G83EFR-xxK.

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H5TQ4G83EFR 4Gb DDR3 SDRAM Hynix Semiconductor

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