HY57V161610FT-6I, HY57V161610FT-xx 16Mb Synchronous DRAM

Hynix Semiconductor

HY57V161610FT-6I Description

16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No.0.1 1.0 Histo.
and is subject to change without notice.

HY57V161610FT-6I Features

* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system

HY57V161610FT-6I Applications

* which require large memory density and high bandwidth. HY57V161610F-Series is organized as 2banks of 524,288x16. HY57V161610F-Series is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data

📥 Download Datasheet

HY57V161610FT-6I Datasheet Preview — This datasheet PDF includes multiple part numbers: HY57V161610FT-6I, HY57V161610FT-xx. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: HY57V161610FT-6I, HY57V161610FT-xx
Manufacturer: Hynix Semiconductor
File Size: 152.01 KB
Datasheet: HY57V161610FT-xx_HynixSemiconductor.pdf
Description: 16Mb Synchronous DRAM
Note: This datasheet PDF includes multiple part numbers: HY57V161610FT-6I, HY57V161610FT-xx.
Please refer to the document for exact specifications by model.

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16Mb Synchronous DRAM Hynix Semiconductor

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