HY57V161610FT-7I, HY57V161610FT-xx Datasheet - Hynix Semiconductor

HY57V161610FT-7I, HY57V161610FT-xx, 16Mb Synchronous DRAM

16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No.0.1 1.0 Histo.
and is subject to change without notice.

HY57V161610FT-xx_HynixSemiconductor.pdf

HY57V161610FT-7I Datasheet Preview — This datasheet PDF includes multiple part numbers: HY57V161610FT-7I, HY57V161610FT-xx. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HY57V161610FT-7I, HY57V161610FT-xx

Manufacturer:

Hynix Semiconductor

File Size:

152.01 KB

Description:

16Mb Synchronous DRAM

Note:

This datasheet PDF includes multiple part numbers: HY57V161610FT-7I, HY57V161610FT-xx.
Please refer to the document for exact specifications by model.

Features

* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system

Applications

* which require large memory density and high bandwidth. HY57V161610F-Series is organized as 2banks of 524,288x16. HY57V161610F-Series is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data

HY57V161610FT-7I Distributors

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HY57V161610FT-xx 16Mb Synchronous DRAM Hynix Semiconductor

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