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HY57V561620FLT-5, HY57V561620FT-6 Datasheet - Hynix Semiconductor

HY57V561620FLT-5 256M (16M x 16bit) Hynix SDRAM Memory

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / Dec. 2009 1 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series Document Title 256Mbit (16M x16) Synchronous DRAM Revision Histo.

HY57V561620FLT-5 Features

* Standard SDRAM Protocol

* Internal 4bank operation

* Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V

* All device pins are compatible with LVTTL interface

* Low Voltage interface to reduce I/O power

* 8,192 Refresh cycles / 64ms

* Programmable CAS latency of 2 or 3

HY57V561620FT-6-HynixSemiconductor.pdf

This datasheet PDF includes multiple part numbers: HY57V561620FLT-5, HY57V561620FT-6. Please refer to the document for exact specifications by model.
HY57V561620FLT-5 Datasheet Preview Page 2 HY57V561620FLT-5 Datasheet Preview Page 3

Datasheet Details

Part number:

HY57V561620FLT-5, HY57V561620FT-6

Manufacturer:

Hynix Semiconductor

File Size:

727.86 KB

Description:

256m (16m x 16bit) hynix sdram memory.

Note:

This datasheet PDF includes multiple part numbers: HY57V561620FLT-5, HY57V561620FT-6.
Please refer to the document for exact specifications by model.

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TAGS

HY57V561620FLT-5 HY57V561620FT-6 256M 16M 16bit Hynix SDRAM Memory Hynix Semiconductor

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