HY57V561620FLTP-H, HY57V561620FT-6 - 256M (16M x 16bit) Hynix SDRAM Memory

Hynix Semiconductor

Datasheet Details

Part number	HY57V561620FLTP-H, HY57V561620FT-6
Manufacturer	Hynix Semiconductor
File Size	727.86 KB
Description	256M (16M x 16bit) Hynix SDRAM Memory
Datasheet	HY57V561620FT-6-HynixSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: HY57V561620FLTP-H, HY57V561620FT-6. Please refer to the document for exact specifications by model.

and is subject to change without notice.

Standard SDRAM Protocol.
Internal 4bank operation.
Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V.
All device pins are compatible with LVTTL interface.
Low Voltage interface to reduce I/O power.
8,192 Refresh cycles / 64ms.
Programmable CAS latency of 2 or 3.
Programmable Burst Length and Burst Type - 1, 2, 4, 8 or full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst.
0oC ~ 70oC Operation.
Package Type : 54_Pin TSOPII (Lead Free,.

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HY57V561620FLT-6 - 256M (16M x 16bit) Hynix SDRAM Memory
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Published: Nov 27, 2015 |