HY57V651620B Datasheet - Hynix Semiconductor

HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM

The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16. H Y 5 7 V 6 4 1 6 2 0 H G i s o f f e r i n g f u l l y s y n c h r o n o u .

HY57V651620B Features

* Single 3.3±0.3V power supply Note)

* Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst All device pins are compatible with LVTTL interface JEDEC

HY57V651620B Datasheet (81.92 KB)