HY57V651620B Datasheet (Hynix Semiconductor) - 4 Banks x 1M x 16Bit Synchronous DRAM

HY57V651620B, 4 Banks x 1M x 16Bit Synchronous DRAM

The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V641620HG is organized as 4banks of 1,048,576x16.

H Y 5 7 V 6 4 1 6 2 0 H G i s o f f e r i n g f u l l y s y n c h r o n o u

HY57V651620B Features

* Single 3.3±0.3V power supply Note)

* Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst All device pins are compatible with LVTTL interface JEDEC