HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM

Hynix Semiconductor

Description

HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM .
The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density.

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Datasheet Specifications

Part number: HY57V651620B
Manufacturer: Hynix Semiconductor
File Size: 81.92 KB
Datasheet: HY57V651620B_HynixSemiconductor.pdf
Description: 4 Banks x 1M x 16Bit Synchronous DRAM

Features

* Single 3.3±0.3V power supply Note)
* Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst All device pins are compatible with LVTTL interface JEDEC

Applications

* which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16. H Y 5 7 V 6 4 1 6 2 0 H G i s o f f e r i n g f u l l y s y n c h r o n o u s o p e r a t i o n r e f e r e n c e d t o a p o s i t i v e e d g e o f t h e c l o c k . A l l i n p u t s a n d

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HY57V651620B Banks 16Bit Synchronous DRAM Hynix Semiconductor

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