HY57V651620B - 4 Banks x 1M x 16Bit Synchronous DRAM

Hynix Semiconductor

The HY57V651620B by Hynix Semiconductor is a 4 Banks x 1M x 16Bit Synchronous DRAM. Below is the official datasheet preview.

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HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM by Hynix Semiconductor - Datasheet Preview — Official preview page of the **HY57V651620B** 4 Banks x 1M x 16Bit Synchronous DRAM datasheet (Hynix Semiconductor).

Datasheet Details

Part number	HY57V651620B
Manufacturer	Hynix Semiconductor
File Size	81.92 KB
Description	4 Banks x 1M x 16Bit Synchronous DRAM
Datasheet	HY57V651620B_HynixSemiconductor.pdf
Additional preview pages of the HY57V651620B datasheet.

HY57V651620B Product details

Description

The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

Features

Single 3.3±0.3V power supply Note).
Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch.
All inputs and outputs referenced to positive edge of system clock - 1, 2, 4 or 8 for Interleave Burst.
Programmable CAS Lat.

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Other Datasheets by Hynix Semiconductor

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Published: Apr 2, 2005 |