20N20 Datasheet, Mosfet, INCHANGE

20N20 Features

  • Mosfet
  • Static drain-source on-resistance: RDS(on) ≤180mΩ
  • Fast Switching Speed
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performa

PDF File Details

Part number:

20N20

Manufacturer:

INCHANGE

File Size:

276.96kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: 20N20 📥 Download PDF (276.96kb)
Page 2 of 20N20

20N20 Application

  • Applications
  • ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 I

TAGS

20N20
N-Channel
MOSFET
INCHANGE

📁 Related Datasheet

20N201K - Metal Oxide Varistor (HUAAN)
TMOV 20M(E,N)Series Metal Oxide Varistors Data Sheet Features ·TMOV integrated thermal protection device ·High peak surge current rating up to 10KA ·D.

20N220K - Metal Oxide Varistor (HUAAN)
TMOV 20M(E,N)Series Metal Oxide Varistors Data Sheet Features ·TMOV integrated thermal protection device ·High peak surge current rating up to 10KA ·D.

20N221K - Metal Oxide Varistor (HUAAN)
TMOV 20M(E,N)Series Metal Oxide Varistors Data Sheet Features ·TMOV integrated thermal protection device ·High peak surge current rating up to 10KA ·D.

20N241K - Metal Oxide Varistor (HUAAN)
TMOV 20M(E,N)Series Metal Oxide Varistors Data Sheet Features ·TMOV integrated thermal protection device ·High peak surge current rating up to 10KA ·D.

20N270K - Metal Oxide Varistor (HUAAN)
TMOV 20M(E,N)Series Metal Oxide Varistors Data Sheet Features ·TMOV integrated thermal protection device ·High peak surge current rating up to 10KA ·D.

20N271K - Metal Oxide Varistor (HUAAN)
TMOV 20M(E,N)Series Metal Oxide Varistors Data Sheet Features ·TMOV integrated thermal protection device ·High peak surge current rating up to 10KA ·D.

20N03 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor 20N03 ·FEATURES ·Drain Current- ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resi.

20N03HL - MTD20N03HL (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL/D Designer's HDTMOS E-FET .™ High Density Power FET DPAK for Surface Moun.

20N03L - IPD20N03L (Infineon Technologies)
IPD20N03L IPU20N03L OptiMOS® Buck converter series Feature •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A .

20N06 - N-Channel MOSFET (Inchange Semiconductor)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 20N06 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Stati.

Stock and price

part
ROHM Semiconductor
MOSFET N-CH 200V 12A LPTS
DigiKey
RCJ120N20TL
3 In Stock
Qty : 500 units
Unit Price : $0.63
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts