20N20 Datasheet - INCHANGE

20N20, N-Channel MOSFET

isc N-Channel MOSFET Transistor 20N20 *

Features

* Static drain-source on-resistance: RDS(on) ≤180mΩ
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable for synchronous rectification for server and general purpose applicati

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 125 Tj Max.
Operating Junction Temperature 150 Tstg Storage Te

20N20-INCHANGE.pdf