20N03HL Datasheet - Motorola

20N03HL, MTD20N03HL

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL/D Designer's HDTMOS E-FET .™ High Density Power FET DPAK for Surface Moun.

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Datasheet Details

Part number:

20N03HL

Manufacturer:

Motorola

File Size:

206.39 KB

Description:

MTD20N03HL

Features

* d by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed rea

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits www. DataSheet4U. com where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche E

20N03HL Distributors

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