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2SB1343 - PNP Transistor

2SB1343 Description

isc Silicon PNP Darlington Power Transistor 2SB1343 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A). Minimum Lot-to-.

2SB1343 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak

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Datasheet Details

Part number
2SB1343
Manufacturer
INCHANGE
File Size
210.06 KB
Datasheet
2SB1343-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1343-like datasheet