2SB1344 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor 2SB1344 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A). Complement to T.

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Datasheet Specifications

Part number: 2SB1344
Manufacturer: INCHANGE
File Size: 210.91 KB
Datasheet: 2SB1344-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak

2SB1344 Distributors

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2SB1344 PNP Transistor INCHANGE

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