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2SB1567 PNP Transistor

2SB1567 Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain. Built-in resistor between base and emitter. Comple.

2SB1567 Applications

* Designed for high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2 A ICM Collector Current-P

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Datasheet Details

Part number
2SB1567
Manufacturer
INCHANGE
File Size
206.17 KB
Datasheet
2SB1567-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1567-like datasheet