2SB1567 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain. Built-in resistor between base and emitter. Comple.

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Datasheet Specifications

Part number: 2SB1567
Manufacturer: INCHANGE
File Size: 206.17 KB
Datasheet: 2SB1567-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2 A ICM Collector Current-P

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2SB1567 PNP Transistor INCHANGE

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