Datasheet4U Logo Datasheet4U.com

2SB1568 PNP Transistor

2SB1568 Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A). Complement to Ty.

2SB1568 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Co

📥 Download Datasheet

Preview of 2SB1568 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB1568
Manufacturer
INCHANGE
File Size
207.13 KB
Datasheet
2SB1568-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB156 - PNP Transistor (Hitachi)
  • 2SB1560 - Silicon PNP Transistor (Sanken electric)
  • 2SB1561 - Medium Power Transistor (Rohm)
  • 2SB1561-Q - Transistor (TY Semiconductor)
  • 2SB1561U - PNP Silicon Diode (SURGE)
  • 2SB1562 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • 2SB1565 - Power Transistor (Rohm)
  • 2SB1566 - Power Transistor (Rohm)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB1568-like datasheet