Datasheet4U Logo Datasheet4U.com

2SB1625 PNP Transistor

2SB1625 Description

isc Silicon PNP Darlington Power Transistor .
High Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min). Low-Collector Saturation Voltage: VCE(sat)= -2. Compleme.

2SB1625 Applications

* Designed for audio,series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A I

📥 Download Datasheet

Preview of 2SB1625 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB1625
Manufacturer
INCHANGE
File Size
216.65 KB
Datasheet
2SB1625-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB1622 - Power Transistor (Sanken)
  • 2SB1623 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1623A - Silicon PNP epitaxial planar type Transistor (Panasonic)
  • 2SB1624 - Silicon PNP Transistor (Sanken electric)
  • 2SB1626 - Silicon PNP Transistor (Sanken electric)
  • 2SB1628 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SB1629 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1602 - TRANSISTOR (Toshiba Semiconductor)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB1625-like datasheet