2SB1625 Datasheet - INCHANGE

2SB1625, PNP Transistor

isc Silicon PNP Darlington Power Transistor .
High Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min). Low-Collector Saturation Voltage: VCE(sat)= -2. Compleme.

datasheet Preview Page 1 from Datasheet4u.com

2SB1625-INCHANGE.pdf

2SB1625 Datasheet Preview — Preview of 2SB1625 PDF

Datasheet Details

Part number:

2SB1625

Manufacturer:

INCHANGE

File Size:

216.65 KB

Description:

PNP Transistor

Applications

* Designed for audio,series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A I

2SB1625 Distributors

📁 Related Datasheet

2SB1622 2SB1623 2SB1623A 2SB1624 2SB1626 2SB1628

📌 All Tags

2SB1625 PNP Transistor INCHANGE

INCHANGE 2SB1625-like datasheet