2SB1628 Datasheet - NEC

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2SB1628 PNP SILICON EPITAXIAL TRANSISTOR

DATA SHEET SILICON TRANSISTOR 2SB1628 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1628 featu.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

2SB1628_NEC.pdf

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Datasheet Details

Part number:

2SB1628

Manufacturer:

NEC

File Size:

145.84 KB

Description:

PNP SILICON EPITAXIAL TRANSISTOR

Features

* high current capacity in small dimension and is ideal for DC/DC converters and mortor drivers. PACKAGE DRAWING (UNIT: mm) FEATURES
* High current capacitance
* Low collector saturation voltage QUALITY GRADES
* Standard Please refer to “Quality Grades on NEC Semiconductor D

Applications

* Electrode connection 1: Emitter 2: Collector (fin) 3: Base ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Symbol VCBO VCEO VEBO IC(DC) IC(pulse) PW ≤ 10 ms Duty cycle ≤ 5

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2SB1628 PNP SILICON EPITAXIAL TRANSISTOR NEC

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