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2SB1657 Silicon PNP Transistor

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Description

DATA SHEET SILICON TRANSISTOR 2SB1657 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS .

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Datasheet Specifications

Part number
2SB1657
Manufacturer
NEC
File Size
47.46 KB
Datasheet
2SB1657_NEC.pdf
Description
Silicon PNP Transistor

Features

* Low VCE(sat) VCE(sat) =
* 0.15 V Max (@lC/lB = 0.5 A/25 mA) 3.8 ± 0.2 (0.149) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. 2.8 MAX. (0.334 MAX. ) (0.110 MAX. ) φ 3.2 ± 0.2 ( φ 0.126)
* High DC Current Gain hFE = 150 to 600 (@VCE =
* 2.0 V, lC =
* 0.5 A)

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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