* 3.8±0.2 90° 0.65±0.1 0.85±0.1 2.5±0.1 1.0±0.1 0.7±0.1 0.7±0.1 0.8C 0.8C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO
2SB1653
Panasonic Semiconductor
39.19 KB
Silicon pnp transistor.
Power Transistors 2SB1653 Silicon PNP triple diffusion planar type For power switching 7.5±0.2 Unit: mm 4.5±0.2 q q q High collector to emitter VC.
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