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2SB1655 - PNP Transistor

2SB1655 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Low Collector Saturation Voltage- : VCE(sat)= -1.

2SB1655 Applications

* Designed for power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector

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Datasheet Details

Part number
2SB1655
Manufacturer
INCHANGE
File Size
202.31 KB
Datasheet
2SB1655-INCHANGE.pdf
Description
PNP Transistor

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INCHANGE 2SB1655-like datasheet