2SB1655 Datasheet, Transistor, INCHANGE

✔ 2SB1655 Application

Designed for power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO

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2SB1655

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Pnp transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) *Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB=

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2SB1655 PNP Transistor INCHANGE