Datasheet4U Logo Datasheet4U.com

2SB1655 - PNP Transistor

2SB1655 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Low Collector Saturation Voltage- : VCE(sat)= -1.

2SB1655 Applications

* Designed for power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector

📥 Download Datasheet

Preview of 2SB1655 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB1655
Manufacturer
INCHANGE
File Size
202.31 KB
Datasheet
2SB1655-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB1653 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1657 - Silicon PNP Transistor (NEC)
  • 2SB1658 - Silicon PNP Transistor (NEC)
  • 2SB1659 - Silicon PNP Transistor (Sanken electric)
  • 2SB1602 - TRANSISTOR (Toshiba Semiconductor)
  • 2SB1603 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1603A - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1604 - Silicon PNP Transistor (Panasonic Semiconductor)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB1655-like datasheet