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2SB1624 PNP Transistor

2SB1624 Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1624 .
High Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min). Low-Collector Saturation Voltage: VCE(sat)= -2. Compleme.

2SB1624 Applications

* Designed for audio,series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A I

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Datasheet Details

Part number
2SB1624
Manufacturer
INCHANGE
File Size
199.67 KB
Datasheet
2SB1624-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1624-like datasheet