2SB1624 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1624 .
High Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min). Low-Collector Saturation Voltage: VCE(sat)= -2. Compleme.

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Datasheet Specifications

Part number: 2SB1624
Manufacturer: INCHANGE
File Size: 199.67 KB
Datasheet: 2SB1624-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for audio,series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A I

2SB1624 Distributors

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2SB1624 PNP Transistor INCHANGE

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