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2SB783 PNP Transistor

2SB783 Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB783 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Good Linearity of hFE. Fast Switching Speed. 100% avalanche tested. M.

2SB783 Applications

* Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4

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Datasheet Details

Part number
2SB783
Manufacturer
INCHANGE
File Size
184.25 KB
Datasheet
2SB783-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB783-like datasheet