* q q 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 0.4max. 45° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB789 2SB789A 2SB789 VCBO VCEO VEBO ICP IC PC
* Tj Tstg Symbol (Ta=25˚C) 1.0
* 0.2 +0.1 Ratings
* 100
* 120
* 100
* 120
* 5
2SB789
Panasonic Semiconductor
38.50 KB
Silicon pnp transistor.
Transistor
2SB789, 2SB789A
Silicon PNP epitaxial planer type
For low-frequency driver amplification Complementary to 2SD968 and 2SD968A
Unit: mm
s F.
📁 Related Datasheet
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(INCHANGE)
isc Silicon PNP Power Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min) ·Good Lineari.
2SB782 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
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2SB782
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Good Lineari.
2SB783 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB783
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·Good Lineari.
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(INCHANGE)
isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2SB786
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -40V(Min) .
2SB788 - Silicon PNP Transistor
(Panasonic Semiconductor)
Transistor
2SB788
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification Complementary to 2SD958
6.9±0.1 1.5 2.5±0.1 1..
2SB789A - Silicon PNP Transistor
(Panasonic Semiconductor)
Transistor
2SB789, 2SB789A
Silicon PNP epitaxial planer type
For low-frequency driver amplification Complementary to 2SD968 and 2SD968A
Unit: mm
s F.
2SB703 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB703
DESCRIPTION ·With TO-220C package ·Complemen.
2SB703 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB703
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·DC Current Gain-
: hFE= 40~200 @IC=.
